SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
A1
1
KTC812U
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
6
5
4
D
High pairing property in h
FE
.
The follwing characteristics are common for Q
1
, Q
2
.
2
DIM
A
A1
B
B1
C
D
G
H
3
MILLIMETERS
_
2.00 + 0.20
_
1.3 + 0.1
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
A
H
C
C
T
G
T
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
RATING
60
50
5
150
30
200
150
-55
150
UNIT
V
V
V
mA
mA
mW
1. Q
1
2. Q
1
3. Q
2
4. Q
2
5. Q
2
6. Q
1
EMITTER
BASE
BASE
COLLECTOR
EMITTER
COLLECTOR
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
I
CBO
I
EBO
)
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2
I
C
=100
, I
B
=10
MIN.
-
-
120
-
80
-
, Rg=10
-
TYP.
-
-
-
0.1
-
2
1.0
Type Name
6
5
4
SYMBOL
MAX.
0.1
0.1
400
0.3
-
3.5
10
UNIT.
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
V
V
CE
=10V, I
C
=1
V
CB
=10V, I
E
=0, f=1
V
CE
=6V, I
C
=0.1 , f=1
Note : h
FE
Classification Y(4):120 240, GR(6):200 400
Marking
W
1
2
3
h
FE
Rank
2002. 1. 7
Revision No : 0
1/3
1
2
3
