SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V
EBO
=25V(Min.)
High Reverse h
FE
: Reverse h
FE
=150(Typ.) (V
CE
=-2V, I
C
=-4mA)
A
F
G
K
1
KTC812T
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
K
6
Low on Resistance : R
ON
=1 (Typ.), (I
B
=5mA)
2
5
4
DIM
A
B
C
D
E
D
F
G
H
I
3
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
C
G
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
0.8
)
RATING
50
20
25
300
60
0.9
150
-55 150
UNIT
V
V
V
mA
mA
mW
J
K
L
J
J
H
I
L
1. Q
1
2. Q
1
3. Q
2
4. Q
2
5. Q
2
6. Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
TS6
* Package mounted on a ceramic board (600
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Marking
h
FE
Rank
6
5
4
Lot No.
Q1
Q2
Type Name
M
1
2
3
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
Storage Time
Fall Time
Note : h
FE
Classification
B: 350 1200
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
t
on
INPUT
50鈩?/div>
4k鈩?/div>
3k鈩?/div>
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=25V, I
C
=0
V
CE
=2V, I
C
=4mA
I
C
=30mA, I
B
=3mA
V
CE
=2V, I
C
=4mA
V
CE
=6V, I
C
=4mA
V
CB
=10V, I
E
=0, f=1MHz
OUTPUT
MIN.
-
-
350
-
-
-
-
-
-
-
TYP.
-
-
-
0.042
0.61
30
4.8
160
500
130
MAX.
0.1
0.1
1200
0.3
-
-
7
-
-
-
UNIT
A
A
V
V
MHz
pF
t
stg
t
f
10V
1碌s
DUTY CYCLE < 2%
=
V
BB
=-3V
1k鈩?/div>
nS
V
CC
=12V
2002. 12. 5
Revision No : 1
1/3
1
2
3
