SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current.
: V
CE(sat)
250mV at I
C
=200mA/I
B
=10mA.
A1
KTC802E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
Low V
CE(sat)
.
A
C
1
6
Complementary to KTA702E.
3
4
C
2
5
P
P
DIM
A
A1
B
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_
1.2 + 0.05
0.50
_
0.2 + 0.05
_
0.5 + 0.05
_
0.12 + 0.05
5
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : Single pulse Pw=1mS.
* Total Rating.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
(Note)
P
C
*
T
j
T
stg
RATING
15
12
6
500
1
200
150
-55
150
UNIT
V
V
V
mA
A
mW
1. Q
1
2. Q
1
3. Q
2
4. Q
2
5. Q
2
6. Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
H
MAXIMUM RATINGS (Ta=25
)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
J
D
Q2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=15V, I
E
=0
I
C
=10 A
I
C
=1mA
I
E
=10 A
V
CE
=2V, I
C
=10mA
I
C
=200mA, I
B
=10mA
V
CE
=2V, I
C
=10mA, f
T
=100MHz
V
CB
=10V, I
E
=0, f=1MHz
1
2
3
MIN.
-
15
12
6
270
-
-
-
TYP.
-
-
-
-
-
90
320
7.5
MAX.
100
-
-
-
680
250
-
-
UNIT
nA
V
V
V
-
mV
MHz
pF
Marking
6
5
4
Type Name
L Z
1
2
3
2002. 2. 20
Revision No : 1
1/3
1
2
3
