SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=25(Min.) at V
CE
=6V, I
C
=400mA.
Complementary to KTA511T.
A
F
G
1
2
KTC611T
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
5
DIM MILLIMETERS
_
A
2.9 + 0.2
B
C
D
E
F
G
H
I
J
K
L
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
3
4
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
0.8
)
RATING
35
30
5
500
-500
0.9
150
-55
150
UNIT
V
V
V
mA
mA
W
C
L
J
J
H
1. Q
1
BASE
2. Q
1
, Q
2
EMITTER
3. Q
2
BASE
4. Q
2
COLLECTOR
5. Q
1
COLLECTOR
TSV
* Package mounted on a ceramic board (600
EQUIVALENT CIRCUIT(TOP VIEW)
5
4
D
Q1
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
h
FE
(2) Classification
0:70 140,
0:25Min.,
Y:120
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
h
FE
(2) (Note)
V
CE(sat)
V
BE
f
T
C
ob
240
Y:40Min.
TEST CONDITION
V
CB
=35V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=400mA
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=20mA
V
CB
=6V, I
E
=0, f=1MHz
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
0.1
0.8
300
7.0
MAX.
0.1
0.1
240
-
0.25
1.0
-
-
V
V
MHz
pF
UNIT
A
A
Marking
h
FE
Rank
Type Name
5
4
L
1
2
3
2002. 1. 24
Revision No : 1
I
Q2
2
3
Lot No.
1/2
1
2
