SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
A
KTC5103D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
FEATURES
High Power Dissipation : P
C
=1.3W(Ta=25 )
Complementary to KTA1385D/L
Q
C
H
P
F
F
2
3
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
* PW
10ms, Duty Cycle
50%
Ta=25
Tc=25
DC
Pulse *
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
60
60
7
5
8
1
1.0
15
150
-55 150
UNIT
V
V
V
1
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
K
E
M
D
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
A
A
W
A
C
I
J
B
D
O
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
1.0
+
0.1
0.90 MAX
Q
K
1. BASE
2. COLLECTOR
3. EMITTER
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2) (Note)
h
FE
(3)
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Turn On Time
Switching
Time
Storage Time
Fall Time
* Pulse test : PW
50 S,
*
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
I
B1
I
B2
I
B1
=-I
B2
=0.2A
DUTY CYCLE < 1%
=
I
B2
IPAK
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=1V, I
C
=0.1A
V
CE
=1V, I
C
=2A
V
CE
=2V, I
C
=5A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
OUTPUT
20碌sec
5鈩?/div>
INPUT
I
B1
MIN.
-
-
60
160
50
-
-
-
-
-
TYP.
-
-
-
-
-
0.1
0.9
0.2
1.1
0.2
MAX.
10
10
-
400
-
0.3
1.2
1
2.5
1
UNIT
A
A
V
V
S
V
CC
=10V
Duty Cycle 2% Pulse
O:160 320,
Y:200
400.
Note) h
FE
(2) Classification :
2003. 3. 27
Revision No : 3
1/3
1
2
3
