SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATINS.
FEATURES
High Transition Frequency : f
T
=100MHz(Typ.)
Complementary Pair with KTA1837.
U
E
KTC4793
TRIPLE DIFFUSED NPN TRANSISTOR
A
C
S
DIM
A
B
C
D
E
F
R
L
L
M
T
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
230
230
5
1
0.1
2.0
20
150
-55 150
UNIT
V
V
V
A
A
W
O
D
D
N
T
N
T
J
MAXIMUM RATING (Ta=25
)
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
V
H
1
2
Q
3
MILLIMETERS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
12.30 MAX
0.75 MAX
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
25
5
0.5
2.60 0.15
F
G
B
1. BASE
2. COLLECTOR
K
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=230V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=10V, I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
230
100
-
-
-
-
TYP.
-
-
-
-
-
-
100
20
MAX.
1.0
1.0
-
320
1.5
1.0
-
-
V
V
MHz
pF
UNIT
A
A
V
2003. 2. 17
Revision No : 1
P
1/2
1
2
