SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
U
E
KTC4527F
TRIPLE DIFFUSED NPN TRANSISTOR
A
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25
)
Junction Temperature
Storage Temperature Range
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
1100
800
7
3
10
1.5
40
150
-55 150
UNIT
K
S
DIM
A
B
C
D
E
F
R
V
V
V
A
A
T
L
L
M
D
D
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
V
N
T
N
T
H
O
W
Q
1
2
3
MILLIMETERS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
12.30 MAX
0.75 MAX
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
25
5
0.5
2.60 0.15
F
G
J
1. BASE
2. COLLECTOR
B
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Output Capacitance
Transition Frequency
Turn On Time
Switching
Time
Storage Time
Fall Time
Note : h
FE
(1) Classification R:15 30, O:20
2001. 4. 9
Revision No : 0
SYMBOL
I
CBO
I
EBO
V
CEX(SUS)
V
CE(sat)
V
BE(sat)
h
FE
(1) (Note)
h
FE
(2)
BV
CBO
BV
CEO
BV
EBO
C
ob
f
T
t
on
t
stg
t
f
40
I
B1
TEST CONDITION
V
CB
=800V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=1.5A, I
B1
=-I
B2
=0.3A
L=2mH, Clamped
I
C
=1.5A, I
B
=0.3A
I
C
=1.5A, I
B
=0.3A
V
CE
=5V, I
C
=0.2A
V
CE
=5V, I
C
=1A
I
C
=1mA, I
E
=0
I
C
=5mA, R
BE
=
I
E
=1mA, I
C
=0
V
CB
=10V, f=1MHz, I
E
=0
V
CE
=10V, I
C
=0.2A
OUTPUT
20碌S
INPUT
I
B2
I
B1
=0.4A , I
B2
=-0.8A
DUTY CYCLE < 1%
=
I
B1
200鈩?/div>
I
B2
MIN.
-
-
800
-
-
15
8
1100
800
7
-
-
-
-
-
P
TYP.
-
-
-
-
-
-
-
-
-
-
60
15
-
-
-
MAX.
10
10
-
2
1.5
40
-
-
-
-
-
-
0.5
3
0.3
UNIT
A
A
V
V
V
V
V
V
pF
MHz
S
V
CC
=400V
1/3
1
2
3
