SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
KTC4526
TRIPLE DIFFUSED NPN TRANSISTOR
A
R
S
E
F
D
P
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25
)
Junction Temperature
Storage Temperature Range
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
j
T
stg
RATING
1100
800
7
1.5
5
0.8
40
150
-55 150
UNIT
V
H
Q
T
V
A
A
W
L
C
C
M
K
M
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Output Capacitance
Transition Frequency
Turn On Time
Switching
Time
Storage Time
Fall Time
Note : h
FE
(1) Classification R:15 30, O:20
SYMBOL
I
CBO
I
EBO
V
CEX(SUS)
V
CE(sat)
V
BE(sat)
h
FE
(1) (Note)
h
FE
(2)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
C
ob
f
T
t
on
t
stg
t
f
40
I
B1
TEST CONDITION
V
CB
=800V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=0.75A, I
B1
=-I
B2
=0.15A
L=5mH, Clamped
I
C
=0.75A, I
B
=0.15A
I
C
=0.75A, I
B
=0.15A
V
CE
=5V, I
C
=0.1A
V
CE
=5V, I
C
=0.5A
I
C
=1mA, I
E
=0
I
C
=5mA, R
BE
=
I
E
=1mA, I
C
=0
V
CB
=10V, f=1MHz, I
E
=0
V
CE
=10V, I
C
=0.1A
OUTPUT
20碌S
INPUT
I
B2
I
B1
=0.2A , I
B2
=-0.4A
DUTY CYCLE < 1%
=
I
B1
400鈩?/div>
I
B2
MIN.
-
-
800
-
-
15
8
1100
800
7
-
-
-
-
-
O
1
2
3
N
G
V
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
_
桅3.60
+ 0.20
3.00
6.70 MAX
_
13.60 + 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
_
9.50 + 0.20
_
8.00 + 0.20
2.90 MAX
B
TYP.
-
-
-
-
-
-
-
-
-
-
35
15
-
-
-
MAX.
10
10
-
2
1.5
40
-
-
-
-
-
-
0.5
3
0.3
UNIT
A
A
V
V
V
V
V
V
pF
MHz
S
V
CC
=400V
2000. 4. 10
Revision No : 0
1/3
1
2
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