SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Amplifier Output Stage.
Complementary to KTA1726.
Q
E
A
R
S
KTC4512
EPITAXIAL PLANAR NPN TRANSISTOR
Recommended for 30W 35W Audio Frequency
F
D
P
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
80
80
6
6
3
50
150
-55
150
UNIT
V
V
V
A
A
W
K
L
C
C
M
M
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
R:55~110,
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
O:80~160.
TEST CONDITION
V
CB
=80V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=25mA, I
B
=0
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
80
55
-
-
-
TYP.
-
-
-
-
-
20
150
MAX.
10
10
-
160
0.5
-
-
V
MHz
pF
UNIT
A
A
V
1999. 6. 24
Revision No : 0
O
1
2
3
N
G
MAXIMUM RATING (Ta=25
)
H
T
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
_
桅3.60
+ 0.20
3.00
6.70 MAX
_
13.60 + 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
_
9.50 + 0.20
_
8.00 + 0.20
2.90 MAX
B
1/3
1
2
3
