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SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

FEATURES

High Current.

Low V

CE(sat).

: V

CE(sat)

250mV at I

C

=200mA/I

B

=10mA.

A

G

H

KTC4072V

EPITAXIAL PLANAR NPN TRANSISTOR

E

B

1

3

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

* Single pulse Pw=1mS.

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

*

P

C

T

j

T

stg

RATING

15

12

6

500

1

100

150

-55

150

UNIT

V

V

V

mA

A

mW

C

K

P

P

1. EMITTER

2. BASE

3. COLLECTOR

VSM

Marking

J

D

Complementary to KTA2012V.

2

DIM MILLIMETERS

_

A

1.2 +0.05

_

B

0.8 +0.05

_

C

0.5 + 0.05

_

D

0.3 + 0.05

_

E

1.2 + 0.05

_

0.8 + 0.05

G

0.40

H

_

0.12 + 0.05

J

_

K

0.2 + 0.05

P

5

Type Name

LZ

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

SYMBOL

I

CBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

h

FE

V

CE(sat)

f

T

C

ob

TEST CONDITION

V

CB

=15V, I

E

=0

I

C

=10 A

I

C

=1mA

I

E

=10 A

V

CE

=2V, I

C

=10mA

I

C

=200mA, I

B

=10mA

V

CE

=2V, I

C

=10mA, f

T

=100MHz

V

CB

=10V, I

E

=0, f=1MHz

MIN.

-

15

12

6

270

-

-

-

TYP.

-

-

-

-

-

90

320

7.5

MAX.

100

-

-

-

680

250

-

-

UNIT

nA

V

V

V

-

mV

MHz

pF

2002. 2. 20

Revision No : 2

1/3

next

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