SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES
High Current.
Low V
CE(sat).
: V
CE(sat)
250mV at I
C
=200mA/I
B
=10mA.
A
G
H
2
1
KTC4072E
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
D
3
DIM
A
B
C
D
E
G
H
J
Complementary to KTA2012E.
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Single pulse Pw=1mS.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
j
T
stg
RATING
15
12
6
500
1
100
150
-55
150
UNIT
V
V
V
mA
A
mW
1. EMITTER
2. BASE
3. COLLECTOR
C
MAXIMUM RATING (Ta=25
)
J
ESM
Marking
Type Name
LZ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=15V, I
E
=0
I
C
=10 A
I
C
=1mA
I
E
=10 A
V
CE
=2V, I
C
=10mA
I
C
=200mA, I
B
=10mA
V
CE
=2V, I
C
=10mA, f
T
=100MHz
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
15
12
6
270
-
-
-
TYP.
-
-
-
-
-
90
320
7.5
MAX.
100
-
-
-
680
250
-
-
UNIT
nA
V
V
V
-
mV
MHz
pF
2002. 2. 20
Revision No : 2
1/3
1
2
3
