SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
A
L
KTC3875S
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTA1504S.
G
High h
FE
: h
FE
=70
700.
2
3
1
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
60
50
5
150
30
150
150
-55
150
UNIT
V
V
V
mA
mA
mW
K
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h
FE
Rank
Type Name
Lot No.
AL
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification
O:70 140,
Y:120
I
CBO
I
EBO
)
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA
f=1kHz, Rg=10k
GR(G):200
400, BL(L):350 700
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
0.1
0.1
700
0.25
-
3.5
10
V
MHz
pF
dB
UNIT
A
A
SYMBOL
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
240,
2001. 2. 24
Revision No : 2
J
D
1/3
1
2
3
