SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
KTC3532T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
A
F
G
K
B
DIM
A
B
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
D
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTA1532T
C
L
G
High-Speed Switching.
1
E
F
G
H
I
J
K
L
H
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
T
stg
0.8
RATING
20
20
5
1.5
3
300
0.9
150
-55
)
150
UNIT
V
V
V
A
A
mA
W
J
1. EMITTER
2. BASE
3. COLLECTOR
Marking
Lot No.
Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
Swiitching
Time
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
t
on
INPUT
TEST CONDITION
V
CB
=12V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
I
C
=750mA, I
B
=15mA
I
C
=750mA, I
B
=15mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=300mA
V
CB
=10V, f=1MHz
PW=20碌s
DC
<
1%
=
I
B1
I
B2
R
B
50鈩?/div>
V
R
220碌F
470碌F
V
CC
=5V
R
L
MIN.
-
-
20
20
5
-
-
200
-
-
-
OUTPUT
Storage Time
t
stg
Fall Time
t
f
V
BE
=-5V
20I
B1
=-20I
B2
=I
C
=750mA
2001. 6. 26
Revision No : 0
I
TSM
HB
TYP.
-
-
-
-
-
130
0.85
-
210
20
40
MAX.
0.1
0.1
-
-
-
200
1.2
560
-
-
-
MHz
pF
UNIT
A
A
V
V
V
mV
V
-
180
-
nS
-
20
-
1/3
1
2
3
