SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
KTC3531T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) at I
C
=0.5A.
Complementary to KTA1531T.
A
F
G
K
B
DIM
A
B
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
D
1
E
F
G
H
I
J
K
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
0.8
RATING
30
20
5
1
0.9
150
-55
)
150
UNIT
V
V
V
A
W
L
G
H
J
J
1. EMITTER
2. BASE
3. COLLECTOR
* Package mounted on a ceramic board (600
Marking
h
FE
Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
Y:120 240,
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
GR(G):200 400
TEST CONDITION
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
V
CE
=2V, I
C
=1A(Pulse)
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
120
30
-
-
-
-
TYP.
-
-
-
-
0.1
0.85
180
15
MAX.
0.1
0.1
400
-
0.3
1.2
-
-
V
V
MHz
pF
UNIT
A
A
2001. 6. 23
Revision No : 0
I
TSM
HA
1/2
1
2
