SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY AMPLIFIER APPLICATION.
C
KTC3423
TRIPLE DIFFUSED NPN TRANSISTOR
A
B
E
F
G
D
FEATURES
High Breakdown Voltage : V
CEO
=150V(Min.).
Low Output Capacitance : C
ob
=5.0pF(Max.).
High Transition Frequency : f
T
=120MHz(Typ.).
Complementary to KTA1360.
H
J
K
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
150
150
5
50
5
1.5
5
150
-55 150
UNIT
V
V
V
mA
mA
W
1. EMITTER
2. COLLECTOR
3. BASE
N
M
O
1
2
3
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
桅3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
O:70 140, Y:120
240
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
V
BE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=150V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=10mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=30V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
70
-
-
-
-
TYP.
-
-
-
-
-
120
3.5
MAX.
0.1
0.1
240
0.5
1.0
-
5.0
V
V
MHz
pF
UNIT
A
A
2003. 7. 24
Revision No : 1
1/3
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