SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
B
KTC3266
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
: V
CE(sat)
=0.5V(Max.) at I
C
=2A
Complementary to KTA1296.
K
D
E
G
N
A
Low Saturation Voltage.
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
20
20
6
2
0.5
625
150
-55
150
UNIT
F
H
F
V
L
V
V
A
A
mW
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
Y:120 240,
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
GR:200 400
TEST CONDITION
V
CB
=20V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=0.1A
V
CE
=2V, I
C
=2A
I
C
=2A, I
B
=0.1A
V
CE
=2V, I
C
=0.1A
V
CE
=2V, I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
120
75
-
-
-
-
TYP.
-
-
-
-
-
-
120
30
MAX.
0.1
0.1
400
-
0.5
0.85
-
-
V
V
MHz
pF
UNIT
A
A
2000. 11. 30
Revision No : 0
1/2
1
2
