SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : P
C
=625mW.
B
KTC3245
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N
K
E
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
400
350
6
300
625
150
-55 150
UNIT
V
D
H
V
V
mA
mW
L
F
F
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (1)
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
Collector Cut off Current
Collector Cut off Current
Emitter Cutoff Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
EBO
TEST CONDITION
I
C
=100 A, I
E
=0
I
C
=1mA, I
B
=0
I
C
=100 A, I
B
=0
I
E
=10 A, I
C
=0
V
CB
=320V, I
E
=0
V
CE
=320V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
DC Current Gain
*
h
FE
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
*
*
V
CE(sat)
V
BE(sat)
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
MIN.
400
350
400
6.0
-
-
-
40
50
45
40
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
100
500
100
-
200
-
-
0.5
0.75
V
V
UNIT
V
V
V
V
nA
nA
nA
* Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2000. 8. 23
Revision No : 0
1/3
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2
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