SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
Complementary to KTA1282.
B
KTC3210
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
30
30
5
2
-2
625
150
-55
150
UNIT
V
V
V
A
A
mW
L
K
D
E
G
H
F
F
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
0:100 200,
Y:160
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
(BR)EBO
h
FE
(Note)
V
CE(sat)
V
BE
f
T
C
ob
320
TEST CONDITION
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=0
I
C
=1mA, I
C
=0
V
CE
=2V, I
C
=500mA
I
C
=1.5A, I
B
=0.03A
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
30
5
100
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
13
MAX.
100
100
-
-
320
2.0
1.0
-
-
V
V
MHz
pF
UNIT
nA
nA
V
V
1999. 9. 10
Revision No : 0
1/2
1
2
