SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
C
KTC3114
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
E
F
G
D
FEATURE
High DC Current Gain : h
FE
=600
3600.
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
50
50
5
150
30
1.5
150
-55 150
UNIT
V
V
V
mA
mA
W
N
J
K
L
M
O
1
2
3
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
桅3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF(1)
Noise Figure
NF(2)
Note: h
FE
Classification A:600 1800,
B:1200 3600
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA
f=100Hz, Rg=10k
V
CE
=6V, I
C
=0.1mA
f=1kHz, Rg=10k
MIN.
-
-
600
-
100
-
-
-
TYP.
-
-
-
0.1
250
3.5
0.5
0.3
MAX.
0.1
0.1
3600
0.25
-
-
-
-
V
MHz
pF
dB
dB
UNIT
A
A
2003. 7. 24
Revision No : 1
1/3
1
2
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