SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
A
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
FEATURES
Low Saturation Voltage : V
CE(sat)
= 0.4V(Max)(Ic=3A)
High Performance at Low Supply Voltage.
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
DC
Pulse (Note1)
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
RATING
40
20
7
5
8
1.0
150
-55 150
UNIT
V
V
V
A
W
H
F
1
2
F
3
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
K
E
M
Q
D
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
A
C
I
J
Note 1: Pulse Width 100mS, Duty Cycle 30%
Q
K
D
O
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
1.0
+
0.1
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
E
B
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage (1)
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note 1 : h
FE
(1) Classification
O:120 240, Y:200
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
(1)(Note1)
h
FE
(2)
V
CE(sat)
f
T
C
ob
TEST CONDITION
I
C
=100 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=3A, I
B
=60mA(Pulse)
V
CE
=6V, I
C
=50mA
V
CB
=20V, f=1MHz, I
E
=0
MIN.
40
20
7
-
-
120
100
-
20
-
IPAK
TYP.
-
-
-
-
-
-
-
-
100
-
MAX.
-
-
-
100
100
700
-
0.4
-
50
UNIT
V
V
V
nA
nA
V
MHz
pF
400, GR:350 700
2003. 3. 27
Revision No : 3
1/3
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