SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f
T
=100MHz(Typ.).
Complementary to KTA1225D/L.
A
C
KTC2983D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
160
160
5
1.5
1.0
1.0
10
150
-55 150
UNIT
V
V
V
A
A
1. BASE
H
F
1
2
F
3
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
K
E
M
Q
D
2. COLLECTOR
3. EMITTER
DPAK
W
A
C
I
J
D
O
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
1.0
+
0.1
0.90 MAX
Q
K
1. BASE
2. COLLECTOR
3. EMITTER
E
B
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification O:70~140, Y:120~240
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
(BR)EBO
h
FE
(Note)
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=160V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=10V, I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
160
5.0
70
-
-
-
-
IPAK
TYP.
-
-
-
-
-
-
-
100
25
MAX.
1.0
1.0
-
-
240
1.5
1.0
-
-
UNIT
A
A
V
V
V
V
MHz
pF
2003. 3. 27
Revision No : 3
1/3
1
2
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