SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
A
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
High breakdown voltage V
CEO
120V, high current 1A.
Low saturation voltage and good linearity of h
FE
.
Complementary to KTA1045D/L
Q
K
B
M
E
D
FEATURES
C
H
F
1
2
F
3
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
RATING
120
120
5
1
2
1.0
8
150
-55 150
UNIT
V
V
V
A
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
A
C
I
J
D
O
W
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
1.0
+
0.1
0.90 MAX
Q
K
1. BASE
2. COLLECTOR
3. EMITTER
E
B
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn-on Time
Switching Time
Turn-off Time
Storage Time
(Note) : h
FE
(1) Classification
)
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
1
20u sec
100鈩?/div>
1uF
1uF
12V
1鈩?/div>
I
B1
I
B2
24鈩?/div>
IPAK
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1) Note
h
FE
(2)
f
T
C
ob
V
CE(sat)
V
BE(sat)
t
on
t
off
t
stg
MIN.
-
-
120
120
5
100
20
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
130
20
0.15
0.85
100
500
700
MAX.
1
1
-
-
-
320
-
-
-
0.4
1.2
-
-
-
UNIT
A
A
V
V
V
MHz
pF
V
V
nS
-2V
V
CE
=12V
I
C
=10I
B1
=-10I
B2
=500mA
Y:100 200, GR:160 320
2003. 3. 27
Revision No : 3
1/2
1
2
