SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT SWITCHING APPLICATION.
APPLICATION
Relay drivers, high-speed inverters, converters, and other
general high-current switching applications.
A
C
KTC1804D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
FEATURES
Low Collector Emitter Saturation Voltage.
: V
CE(sat)
=0.4V(Max.) (I
C
=4A)
High Current and High f
T
: I
C
=8A, f
T
=180MHz.
Excellent Linearity of h
FE
High Speed Switching Time.
: f
T
=20nS (Typ.)
Complementary to KTA1204D/L
1. BASE
2. COLLECTOR
3. EMITTER
1
H
F
2
F
3
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_ 0.10
0.50 +
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
K
E
M
Q
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
Collector Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
RATING
60
60
6
8
12
1.0
20
150
-55 150
F
F
L
UNIT
V
V
V
A
A
C
DPAK
I
J
D
O
K
W
H
G
P
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
0.1
1.0
+
0.90 MAX
Q
1. BASE
2. COLLECTOR
3. EMITTER
E
B
IPAK
2003. 3. 27
Revision No : 2
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