SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
FEATURES
High Voltage : V
CEO
=-50V(Min.).
High Current : I
C
(Max.)=-1A.
High Transition Frequency : f
T
=150MHz(Typ.).
Wide Area of Safe Operation.
Complementary to KTD863.
F
H
C
P
DEPTH:0.2
KTB764
TRIPLE DIFFUSED PNP TRANSISTOR
B
D
A
S
Q
K
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
G
J
F
H
M
E
M
L
R
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
)
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
-60
-50
-5
-1
-2
1
150
-55
150
V
V
V
A
W
O
SYMBOL
RATING
UNIT
1
N
2
3
N
H
1. EMITTER
2. COLLECTOR
3. BASE
25
1.25
桅1.50
0.10 MAX
_
12.50 + 0.50
1.00
TO-92L
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification O:60 120, Y:100
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
(BR)CEO
V
CE(sat)
V
BE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-50mA
V
CE
=-2V, I
C
=-1A
I
C
=-1mA, I
B
=0
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
60
30
-50
-
-
-
TYP.
-
-
-
-
-
-0.2
-0.85
150
20
MAX.
-1
-1
320
-
-
-0.7
-1.2
-
-
V
V
V
MHz
pF
UNIT
A
A
200, GR:160 320
1999. 11. 30
Revision No : 2
D
1/3
1
2
3
