SEMICONDUCTOR
TECHNICAL DATA
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
POWER SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES
High DC Current Gain
: h
FE
=200(Min.) (V
CE
=-2V, I
C
=-1A)
P
DEPTH:0.2
C
KTB2234
EPITAXIAL PLANAR PNP TRANSISTOR
B
D
A
Low Saturation Voltage
: V
CE(sat)
=-1.5V(Max.) (I
C
=-1A, I
B
=-1mA)
Complementary to KTD2854.
S
Q
K
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
G
J
F
H
M
E
F
H
M
L
R
H
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Peak
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
-100
-100
-8
-2
-3
-0.5
1
150
-55
150
UNIT
V
V
V
O
N
1
2
3
N
H
1. EMITTER
2. COLLECTOR
3. BASE
25
1.25
桅1.50
0.10 MAX
_
12.50 + 0.50
1.00
TO-92L
A
A
W
EQUIVALENT CIRCUIT
COLLECTOR
BASE
鈭?/div>
鈭?/div>
4k鈩?/div>
鈭?/div>
鈭?/div>
800鈩?/div>
D
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn On Time
Switching
Time
Storage Time
Fall Time
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
0
I
B1
20碌s
DUTY CYCLE < 1%
=
-I
B1
=I
B2
=1mA
V
CC
=-30V
TEST CONDITION
V
CB
=-80V, I
E
=0
V
EB
=-8V, I
C
=0
I
C
=-10mA, I
B
=0
V
CE
=-2V, I
C
=-1A(Pulse)
I
C
=-1A, I
B
=-1mA(Pulse)
I
C
=-1A, I
B
=-1mA(Pulse)
V
CE
=-2V, I
C
=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
I
B2
INPUT
I
B1
I
B2
OUTPUT
MIN.
-
-
-100
2000
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
50
27
0.4
2.0
0.4
MAX.
-10
-4
-
-
-1.5
-2.0
-
-
-
-
-
UNIT
A
mA
V
V
V
MHz
pF
30鈩?/div>
S
2001. 10. 23
Revision No : 0
1/3
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英文版
EPITAXIAL PLANAR PNP TRANSISTOR (MICRO MOTOR DRIVE, HAMMER D...
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