SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1624.
D
K
F
F
D
A
H
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
C
G
J
B
E
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
*
T
j
T
stg
RATING
-60
-50
-6
-3
-6
500
1
150
-55
0.8t)
150
UNIT
V
V
V
A
A
mW
W
1
2
3
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h
FE
Rank
Lot No.
* : Package mounted on ceramic substrate(250mm
2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
TEST CONDITION
V
CB
=-40V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-100
V
CE
=-2V, I
C
=-3A
I
C
=-2A, I
B
=-100
I
C
=-2A, I
B
=-100
V
CE
=-10V, I
C
=-50
V
CB
=-10V, f=1
PW=20碌s
DC
<
1%
=
INPUT
VR
I B1
R8
IB2
25
MIN.
-
-
100
35
-
-
-
-
-
X
TYP.
-
-
-
-
-0.35
-0.94
150
39
70
MAX.
-1
-1
400
-
-0.7
-1.2
-
-
-
V
V
Type Name
UNIT.
Storage Time
t
stg
50
100鈩?/div>
470鈩?/div>
-25V
-
450
-
nS
Fall Time
t
f
400
5V
-10I
B
1=10I
B2
=I
C
=1A
-
35
-
Note : h
FE
(1) Classification A:100 200, B:140 280, C:200
2001. 12. 6
Revision No : 3
1/3
1
2
3
