SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
FEATURES
High Voltage : V
CEO
=-60V(Min.).
High Current : I
C
(Max.)=-1A.
High Transition Frequency : f
T
=150MHz (Typ.).
Wide Area of Safe Operation.
Complementary to KTC4378.
D
K
F
F
D
A
H
KTA1668
EPITAXIAL PLANAR PNP TRANSISTOR
C
G
J
B
E
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
*
T
j
T
stg
2
1
2
3
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
RATING
-80
-60
-5
-1
-2
500
1
150
-55
150
UNIT
V
V
V
A
mW
W
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Marking
h
FE
Rank
Lot No.
P
C
* : Package mounted on ceramic substrate (250mm x0.8t)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification O:60 120, Y:100
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
(BR)CEO
V
CE(sat)
V
BE(sat)
f
T
C
ob
200
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-50mA
V
CE
=-2V, I
C
=-1A
I
C
=-1mA, I
B
=0
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, f=1MHz
MIN.
-
-
60
30
-60
-
-
-
-
TYP.
-
-
-
-
-
-0.2
-0.85
150
12
MAX.
-100
-100
200
-
-
-0.7
-1.2
-
-
V
V
V
MHz
pF
UNIT
nA
nA
1999. 12. 22
Revision No : 2
J
Type Name
1/3
1
2
3
