SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=25(Min.) at V
CE
=-6V, I
C
=-400mA.
A
G
L
KTA1505S
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
L
Complementary to KTC3876S.
2
3
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-35
-30
-5
-500
-50
150
150
-55
150
UNIT
V
V
V
mA
mA
mW
C
N
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
H
M
1. EMITTER
2. BASE
3. COLLECTOR
K
SOT-23
Marking
h
FE
Rank
Type Name
Lot No.
AZ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
(Note) : h
FE
(1) Classification
h
FE
(2) Classification
O:70 140
O:25Min.
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
Y:120
240
Y:40Min.
TEST CONDITION
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-400mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-20mA
V
CB
=-6V, I
E
=0, f=1MHz
GR:200 400
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
-0.1
-0.8
200
13
MAX.
-0.1
-0.1
400
-
-0.25
-1.0
-
-
V
V
MHz
pF
UNIT
A
A
2001. 2. 24
Revision No : 3
J
D
1/2
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