SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
A
L
KTA1504S
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
L
Complementary to KTC3875S.
G
Low Noise : NF=1dB(Typ.), 10dB(Max.).
2
3
1
P
P
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
-50
-50
-5
-150
-30
150
150
-55
150
V
V
V
mA
mA
mW
1. EMITTER
2. BASE
3. COLLECTOR
K
CHARACTERISTIC
SYMBOL
RATING
UNIT
M
SOT-23
Marking
h
FE
Rank
Type Name
Lot No.
AS
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification O:70 140 , Y:120
I
CBO
I
EBO
)
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10k
400
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
-0.1
-
4.0
1.0
MAX.
-0.1
-0.1
400
-0.3
-
7.0
10
V
MHz
pF
dB
UNIT
A
A
SYMBOL
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
240 , GR(G):200
2001. 2. 24
Revision No : 2
J
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
N
H
D
1/2
1
2
