SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
C
KTA1381
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
E
F
G
D
FEATURES
High breakdown voltage : V
CEO
300V.
Small reverse transfer capacitance and
excellent high frequency characteristic.
: C
re
=2.3pF (V
CB
=30V, f=1MHz)
Complementary KTC3503.
H
J
K
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
RATING
-300
-300
-5
-100
-200
1.5
7
150
-55 150
UNIT
V
V
V
mA
N
M
O
1
2
3
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
桅3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
Reverse Transfer Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Base-Emitter Breakdown Voltage
Note : h
FE
Classification
O:60 120,
Y:100
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
f
T
C
ob
C
re
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
200
TEST CONDITION
V
CB
=-200V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-10V, I
C
=-10mA
V
CE
=-30V, I
C
=-10mA
V
CB
=-30V, I
E
=0, f=1MHz
V
CB
=-30V, I
E
=0, f=1MHz
I
C
=-20mA, I
B
=-2mA
I
C
=-20mA, I
B
=-2mA
I
C
=-10 A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10 A, I
C
=0
MIN.
-
-
60
-
-
-
-
-
-300
-300
-5
TYP.
-
-
-
150
3.1
2.3
-
-
-
-
-
MAX.
-0.1
-0.1
200
-
-
-
-0.6
-1.0
-
-
-
MHz
pF
pF
V
V
V
V
V
UNIT
A
A
2003. 7. 24
Revision No : 3
1/3
1
2
3
