SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
B
KTA1279
EPITAXIAL PLANAR PNP TRANSISTOR
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
-300
-300
-5.0
-500
500
625
150
-55
150
UNIT
V
V
V
mA
mA
L
H
A
N
K
D
E
G
F
F
mW
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
TEST CONDITION
I
C
=-100 A, I
E
=0
I
C
=-1.0mA, I
B
=0
I
C
=-1.0mA, V
CE
=-10V
DC Current Gain
h
FE
*
I
C
=-10mA, V
CE
=-10V
I
C
=-30mA, V
CE
=-10V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note :* Pulse test : PW 300 S,
V
CE(sat)
*
V
BE(sat)
*
f
T
C
ob
Duty Cycle 2%
I
C
=-20mA, I
B
=-2.0mA
I
C
=-20mA, I
B
=-2.0mA
V
CE
=-20V, I
C
=-10mA, f=100MHz
V
CB
=-20V, I
E
=0, f=1MHz
MIN.
-300
-300
25
40
25
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
-
-0.5
-0.9
-
6.0
V
V
MHz
V
UNIT
A
A
1994. 6. 15
Revision No : 0
1/1
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