SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE CONTROL APPLICATIONS.
PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS.
CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
K
KTA1073T
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
FEATURES
High Voltage : V
CBO
=-300V, V
CEO
=-300V
A
D
DIM
A
B
G
2
3
C
D
E
F
G
H
I
J
K
L
H
J
I
Low Saturation Voltage : V
CE(sat)
=-0.5V(Max.)
Small Collector Output Capacitance : C
ob
=5.5pF(Typ.)
Complementary to KTC3207T.
F
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
1
C
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
0.8
)
RATING
-300
-300
-5
-100
-20
0.9
150
-55 150
UNIT
V
V
V
mA
mA
W
L
G
J
1. EMITTER
2. BASE
3. COLLECTOR
TSM
* Package mounted on a ceramic board (600
Marking
h
FE
Rank
Type Name
Lot No.
SX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
h
FE
(1)
h
FE
(2) (Note)
V
CE(sat)
V
BE(sat)
f
T
C
ob
O:50 150, Y:100~200
TEST CONDITION
V
CB
=-300V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-0.1mA, I
E
=0
I
C
=-1mA, I
B
=0
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-20mA
I
C
=-20mA, I
B
=-2mA
I
C
=-20mA, I
B
=-2mA
V
CE
=-10V, I
C
=-20mA
V
CB
=-20V, I
E
=0, f=1MHz
MIN.
-
-
-300
-300
30
50
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
55
5.5
MAX.
-0.1
-0.1
-
-
-
200
-0.5
-1.2
-
6.0
V
V
MHz
pF
UNIT
A
A
V
V
2002. 11. 7
Revision No : 1
1/3
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