KST55/56
KST55/56
Driver Transistor
鈥?Collector-Emitter Voltage: V
CEO
= KST55: - 60V
KST56: - 80V
鈥?Collector Power Dissipation: P
C
(max) = 350mW
鈥?Complement to KST05/06
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
Collector Base Voltage
: KST55
: KST56
V
CEO
Collector-Emitter Voltage
: KST55
: KST56
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
-60
-80
-4
-500
350
150
357
V
V
V
mA
mW
擄C
擄C/W
-60
-80
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
* Collector-Emitter Breakdown Voltage
: KST55
: KST56
* Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
: KST55
: KST56
h
FE
V
CE
(sat)
V
BE
(on)
f
T
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
= -60V, I
B
=0
V
CE
= -80V, I
B
=0
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -100mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -100mA
f=100MHz
50
50
50
-0.25
-1.2
V
V
MHz
-0.1
-0.1
碌A(chǔ)
碌A(chǔ)
Test Condition
I
C
= -1mA, I
B
=0
I
E
= -100碌A(chǔ), I
C
=0
V
CB
= -60V, I
E
=0
Min.
-60
-80
-4
-0.1
Max.
Units
V
V
V
碌A(chǔ)
BV
EBO
I
CBO
I
CEO
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
Marking
Marking Code
Type
Mark
KST55
2H
KST56
2G
2H
Rev. A2, November 2002
漏2002 Fairchild Semiconductor Corporation
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