KST5551
KST5551
Amplifier Transistor
鈥?Collector-Emitter Voltage: V
CEO
=160V
鈥?Collector Power Dissipation: P
C
(max)=350mW
3
2
1
SOT-23
Mark: G1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
180
160
6
600
350
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
鈥?/div>
Refer to 2N5551 for graphs
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
=100碌A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10碌A, I
C
=0
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, I
C
=10mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=5V, I
C
=250碌A, R
S
=1K鈩?
f=10Hz to 15.7KMz
100
80
80
30
Min.
180
160
6
50
50
250
0.15
0.2
1
1
300
6
8
V
V
V
V
MHz
pF
dB
Max.
Units
V
V
V
nA
nA
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width=300碌s, Duty Cycle=2%
漏2003 Fairchild Semiconductor Corporation
Rev. B2, February 2003
1
2
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