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KST5550 Datasheet

  • KST5550

  • High Voltage Transistor

  • 4頁

  • FAIRCHILD

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KST5550
KST5550
High Voltage Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
160
140
6
600
350
150
Units
V
V
V
mA
mW
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
=10碌A(chǔ), I
E
=0
I
C
=1mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=100V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1.0mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, V
CE
=10V
f=100MHz
V
CB
=10V, I
E
=0, f=1.0MHz
Marking
100
60
60
20
Min.
160
140
6
100
50
250
0.15
0.25
1.0
1.2
300
6.0
V
V
V
V
MHz
pF
Max.
Units
V
V
V
nA
nA
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
1F
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002

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