KST5179
KST5179
RF Amplifier Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T
a
=25擄C)
Derate above 25擄C
Junction Temperature
Storage Temperature
Parameter
Value
20
12
2.5
50
350
2.8
150
-55 ~ 150
Units
V
V
V
mA
mW
mW/擄C
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
h
fe
NF
G
PE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
Power Gain
Test Condition
I
C
=0.01mA, I
E
=0
I
C
=3mA, I
B
=0
I
E
=0.01mA, I
C
=0
V
CB
=15V, I
E
=0
V
CE
=1V, I
C
=3mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=5mA, f=100MHz
V
CB
=10V, I
E
=0, f=0.1MHz to 1MHz
V
CE
=6V, I
C
=2mA, f=1KHz
V
CE
=6V, I
C
=1.5mA, f=200MHz
R
S
=50鈩?/div>
V
CE
=6V, I
C
=5mA, f=200MHz
15
25
4.5
dB
dB
900
1
25
0.4
1
V
V
MHz
pF
Min.
20
12
2.5
0.02
Max.
Units
V
V
V
碌A(chǔ)
Marking
7H
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
