KST4401
KST4401
Switching Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Parameter
Value
60
40
6
600
350
150
Units
V
V
V
mA
mW
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
BEV
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cut-off Current
Collector Cut-off Current
* DC Current Gain
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
C
=1.0mA, I
B
=0
I
E
=100碌A(chǔ), I
C
=0
V
CE
=35V, V
EB
=0.4V
V
CE
=35V, V
EB
=0.4V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=20mA, V
CE
=10V
f=100MHz
V
CB
=5V, I
E
=0, f=100KHz
V
CC
=30V, V
BE
=2V
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
0.75
250
6.5
35
255
20
40
80
100
40
Min.
60
40
6
100
100
Max.
Units
V
V
V
nA
nA
300
0.4
0.75
0.95
1.2
V
V
V
V
MHz
pF
ns
ns
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
OFF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
Marking
2X
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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