KST4126
KST4126
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Parameter
Value
-25
-25
-4
-200
350
150
357
Units
V
V
V
mA
mW
擄C
擄C/W
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ib
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Input Capacitance
Output Capacitance
Noise Figure
Test Condition
I
C
= -10碌A(chǔ), I
E
=0
I
C
= -1mA, I
E
=0
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -20V, I
E
=0
V
BE
= -3V, I
C
=0
V
CE
= -1V, I
C
= -2mA
V
CE
= -1V, I
C
= -50mA
I
C
= -50mA, I
B
= -5mA
I
C
= -50mA, I
B
= -5mA
V
CE
= -20V, I
C
= -10mA, f=100MHz
V
BE
= -0.5V, I
C
=0, f=1MHz
V
CB
= -5V, I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -100碌A(chǔ), R
S
=1K鈩?/div>
Noise Bandwidth=10Hz to 15.7KHz
250
10
4.5
4
120
60
Min.
-25
-25
-4
-50
-50
360
-0.4
-0.95
V
V
MHz
pF
pF
dB
nA
nA
Max.
Units
V
V
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
Marking
C3
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
