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KST4125 Datasheet

  • KST4125

  • General Purpose Transistor

  • 3頁(yè)

  • FAIRCHILD

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KST4125
KST4125
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
-30
-30
-4
-200
350
150
Units
V
V
V
mA
mW
擄C
鈥?/div>
Refer to KST3906 for graphs
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
= -10碌A(chǔ), I
E
=0
I
C
= -1mA, I
E
=0
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -20V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -1V, I
C
= -2.0mA
V
CE
= -1V, I
C
= -50mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, V
CE
= -20V
f=100MHz
V
CB
= -5V, I
E
=0, f=100KHz
I
C
= -100碌A(chǔ), V
CE
= -5V
R
S
=1K鈩?/div>
f=10Hz to 15.7KHz
200
4.5
5
50
25
Min.
-30
-30
-4
-50
-50
150
-0.4
-0.95
V
V
MHz
pF
dB
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
Marking
ZD
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002

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