KST4123
KST4123
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Parameter
Value
40
30
5
200
350
150
357
Units
V
V
V
mA
mW
擄C
擄C/W
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ib
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Input Capacitance
Output Capacitance
Noise Figure
Test Condition
I
C
=10碌A(chǔ), I
E
=0
I
C
=1mA, I
E
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=20V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=2mA
V
CE
=1V, I
C
=50mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
BE
=0.5V, I
C
=0, f=100KHz
V
CB
=5V, I
E
=0, f=100KHz
V
CE
=5V, I
C
=100碌A(chǔ), R
S
=1K鈩?/div>
Noise Bandwidth=10Hz to 15.7KHz
250
8
4
6
50
25
Min.
40
30
5
50
50
150
0.3
0.95
V
V
MHz
pF
pF
dB
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
Marking
5B
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
