KST3906
KST3906
General Purpose Transistor
3
2
1
SOT-23
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
1. Base 2. Emitter 3. Collector
Value
-40
-40
-5
-200
350
150
Units
V
V
V
mA
mW
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
Test Condition
I
C
= -10碌A(chǔ), I
E
=0
I
C
= -1.0mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CE
= -30V, V
EB
= -3V
V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, V
CE
= -20V
f=100MHz
V
CB
= -5V, I
E
=0, f=1.0MHz
I
C
= -100碌A(chǔ), V
CE
= -5V
R
S
=1K鈩?/div>
f=10Hz to 15.7KHz
V
CC
= -3V, V
BE
= -0.5V
I
C
= -10mA, I
B1
= -1mA
V
CC
= -3V, I
C
= -10mA
I
B1
=I
B2
= -1mA
Min.
-40
-40
-5
Max.
Units
V
V
V
-50
60
80
100
60
30
nA
300
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
-0.25
-0.4
-0.65
250
4.5
4
-0.85
-0.95
V
V
V
V
MHz
pF
dB
t
ON
t
OFF
Turn On Time
Turn Off Time
70
300
ns
ns
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
Marking
2A
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
4
