KST2484
KST2484
Low Noise Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
60
60
6
50
350
150
Units
V
V
V
mA
mW
擄C
鈥?/div>
Refer to KSP5088 for graphs
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figure
Test Condition
I
C
=10碌A(chǔ), I
E
=0
I
C
=10mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=45V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
I
C
=1mA, I
B
=0.1mA
I
C
=1mA, V
CE
=5V
V
CB
=5.0V, I
E
=0, f=1MHz,
I
C
=10碌A(chǔ), V
CE
=5V
R
S
=10K鈩? f=1KHz
250
800
0.35
0.95
6
3
V
V
pF
dB
Min.
60
60
5
10
10
Max.
Units
V
V
V
nA
nA
Marking
1U
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
