KST2222A
KST2222A
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
75
40
6
600
350
150
Units
V
V
V
mA
mW
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
Test Condition
I
C
=10碌A(chǔ), I
E
=0
I
C
=10mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=60V, I
E
=0
V
CE
=10V, I
C
=0.1mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=20mA, V
CE
=20V, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=100碌A(chǔ), V
CE
=10V
R
S
=1K鈩? f=1MHz
V
CC
=30V, I
C
=150mA
V
BE
=0.5V, I
B1
=15mA
0.6
300
8
4
35
35
50
75
100
40
Min.
75
40
6
0.01
Max.
Units
V
V
V
碌A(chǔ)
300
0.3
1.0
1.2
2.0
V
V
V
V
MHz
pF
dB
ns
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
t
ON
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
t
OFF
Turn Off Time
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
285
ns
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
Marking
1P
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
