KST2222A NPN Epitaxial Silicon Transistor
May 2006
KST2222A
NPN Epitaxial Silicon Transistor
General Purpose Transistor
tm
3
Marking
2
1
1P
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
T
a
= 25擄C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature Range
Value
75
40
6
600
350
-55 ~ 150
Units
V
V
V
mA
mW
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain *
Test Condition
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 60V, I
E
= 0
V
CE
= 10V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 500mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 20mA, V
CE
= 20V, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 100碌A(chǔ), V
CE
= 10V
R
S
= 1K鈩? f = 1MHz
V
CC
= 30V, I
C
= 150mA
V
BE
= 0.5V, I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Min.
75
40
6
Max.
Units
V
V
V
碌A(chǔ)
0.01
35
50
75
100
40
300
0.3
1.0
V
V
V
V
MHz
8
4
35
285
pF
dB
ns
ns
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
t
ON
t
OFF
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
0.6
300
1.2
2.0
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KST2222A Rev. B
1
2
3
4
