KST05/06
KST05/06
Driver Transistor
鈥?Collector-Emitter Voltage: V
CEO
= KST05: 60V
KST06: 80V
鈥?Collector Power Dissipation: P
C
(max) = 350mW
鈥?Complement to KST55/56
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
Parameter
Collecto-Base Voltage
: KST05
: KST06
V
CEO
Collector-Emitter Voltage
: KST05
: KST06
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
60
80
4
500
350
150
357
V
V
V
mA
mW
擄C
擄C/W
60
80
V
V
Value
Units
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
* Collector-Emitter Breakdown Voltage
: KST05
: KST06
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KST05
: KST06
I
CEO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Test Condition
I
C
=1mA, I
B
=0
I
E
=100碌A(chǔ), I
C
=0
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CE
=60V, I
B
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=2V, I
C
=100mA, f=100MHz
100
50
50
0.25
1.2
V
V
MHz
Min.
60
80
4
0.1
0.1
0.1
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
BV
EBO
I
CBO
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
Marking Code
Type
Mark
KST05
1H
KST06
1G
Marking
1H
Rev. A2, November 2002
漏2002 Fairchild Semiconductor Corporation
1
2
3
