KSR1110
KSR1110
Switching Application
(Bias Resistor Built In)
鈥?Switching circuit, Inverter, Interface circuit, Driver Circuit
鈥?Built in bias Resistor (R=10K鈩?
鈥?Complement to KSR2110
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit
C
R10
B
R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
40
40
5
100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
R
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Test Condition
I
C
=100碌A, I
E
=0
I
E
=1mA, I
B
=0
V
CB
=30V, I
E
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=10V, I
C
=5mA
7
3.7
250
10
13
100
Min.
40
40
0.1
600
0.3
V
pF
MHz
K鈩?/div>
Typ.
Max.
Units
V
V
碌A
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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2
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