KSR1104
KSR1104
Switching Application
(Bias Resistor Built In)
鈥?Switching circuit, Inverter, Interface circuit, Driver Circuit
鈥?Built in bias Resistor (R
1
=47K鈩? R
2
=47K鈩?
鈥?Complement to KSR2104
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit
C
R0 4
R1
B
R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
50
50
10
100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
=10碌A(chǔ), I
E
=0
I
C
=100碌A(chǔ), I
B
=0
V
CB
=40V, I
E
=0
V
CE
=5V, I
C
=5mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
V
CB
=10V, I
E
=0
f=1.0MHz
V
CE
=5V, I
C
=100碌A(chǔ)
V
CE
=0.3V, I
C
=2mA
32
0.9
47
1
0.5
3
62
1.1
250
3.7
68
0.3
V
MHz
pF
V
V
K鈩?/div>
Min.
50
50
0.1
Typ.
Max.
Units
V
V
碌A(chǔ)
漏2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
1
2
3
4
