KSP62/63/64
KSP62/63/64
Darlington Transistor
鈥?Collector-Emitter Voltage: V
CES
=KSP62: 20V
KSP63/64: 30V
鈥?Collector Power Dissipation: P
C
(max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP62
: KSP63/64
V
CEO
Collector-Emitter Voltage
: KSP62
: KSP63/64
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-20
-30
-10
-500
625
150
-55~150
V
V
V
mA
mW
擄C
擄C
-20
-30
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CES
Parameter
Collector-Emitter Breakdown Voltage
: KSP62
: KSP63/64
Collector Cut-off Current
: KSP62
: KSP63/64
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
: KSP62
: KSP63
: KSP64
: KSP63
: KSP64
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: KSP62
: KSP63/64
* Base-Emitter On Voltage
: KSP62
: KSP63/64
Current Gain Bandwidth Product
: KSP63/64
V
CE
= -5V, I
C
= -10mA
20K
5K
10K
10K
20K
-1.0
-1.5
-1.4
-2
125
V
V
V
V
MHz
V
CB
= -15V, I
E
=0
V
CB
= -30V, I
E
=0
V
BE
= -10V, I
C
=0
-100
-100
-100
nA
nA
nA
Test Condition
I
C
= -100碌A(chǔ), I
B
=0
Min.
-20
-30
Max.
Units
V
V
I
CBO
V
CE
= -5V, I
C
= -100mA
I
C
= -10mA, I
B
= -0.01mA
I
C
= -100mA, I
B
= -0.1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
V
CE
= -5V, I
C
= -100mA
f=100MHz
V
BE
(on)
f
T
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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