KSP55/56
KSP55/56
Amplifier Transistor
鈥?Collector-Emitter Voltage: V
CEO
=KSP55: 60V
KSP56: 80V
鈥?Collector Power Dissipation: P
C
(max) =625mW
鈥?Complement to KSP05/06
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP55
: KSP56
V
CEO
Collector-Emitter Voltage
: KSP55
: KSP56
V
CEO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-60
-80
-4
-500
625
150
-55 ~ 150
V
V
V
mA
mW
擄C
擄C
-60
-80
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
* Collector-Emitter Breakdown Voltage
: KSP55
: KSP56
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP55
: KSP56
I
CEO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CB
= -60V, I
E
=0
V
CB
= -80V, I
E
=0
V
CE
= -60V, I
B
=0
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -100mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -2V, I
C
= -10mA
f=100MHz
50
50
50
-0.25
-1.2
V
V
MHz
-0.1
-0.1
-0.1
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
Test Condition
I
C
= -1mA, I
B
=0
I
E
= -100碌A(chǔ), I
C
=0
Min.
-60
-80
-4
Max.
Units
V
V
BV
EBO
I
CBO
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1
2
3
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