KSP42/43
KSP42/43
High Voltage Transistor
鈥?Collector-Emitter Voltage: V
CEO
=KSP42: 300V
KSP43: 200V
鈥?Collector Power Dissipation: P
C
(max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
Collector Base Voltage
: KSP42
: KSP43
V
CEO
Collector-Emitter Voltage
: KSP42
: KSP43
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
300
200
6
500
625
150
-55 ~ 150
V
V
V
mA
mW
擄C
擄C
300
200
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KSP42
: KSP43
* Collector -Emitter Breakdown Voltage
: KSP42
: KSP43
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP42
: KSP43
I
EBO
Emitter Cut-off Current
: KSP42
: KSP43
h
FE
* DC Current Gain
V
BE
=6V, I
C
=0
V
BE
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CB
=20V, I
E
=0
f=1MHz
V
CE
=20V, I
C
=10mA
f=100MHz
50
25
40
40
0.5
0.9
3
4
V
V
pF
pF
MHz
100
100
nA
nA
V
CB
=200V, I
E
=0
V
CB
=160V, I
E
=0
100
100
nA
nA
Test Condition
I
C
=100碌A(chǔ), I
E
=0
Min.
300
200
I
C
=1mA, I
B
=0
300
200
I
E
=100碌A(chǔ), I
C
=0
6
V
V
V
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
V
CE
(sat)
V
BE
(sat)
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
: KSP42
: KSP43
f
T
Current Gain Bandwidth Product
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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